On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics

The first comprehensive investigation of the high-temperature operation of SiGe HBTs is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are well-suited for many electronics applications operating at temperatures as high as 300/spl deg/C.

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Bibliographic Details
Main Authors: Tianbing Chen, Kuo, W.-M.L., Enhai Zhao, Qingqing Liang, Zhenrong Jin, Cressler, J.D., Joseph, A.J.
Format: Conference Proceeding
Language:English
Subjects:
Aerospace electronics
Aerospace industry
Applied sciences
CMOS technology
Electronics
Exact sciences and technology
Germanium silicon alloys
Heterojunction bipolar transistors
Industrial electronics
Nuclear electronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
Space technology
Temperature
Transistors
Online Access:Request full text
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Description
Summary:The first comprehensive investigation of the high-temperature operation of SiGe HBTs is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are well-suited for many electronics applications operating at temperatures as high as 300/spl deg/C.
DOI:10.1109/BIPOL.2004.1365784