42 GHz bandwidth InGaAlAs/InP electro absorption modulator with sub-volt modulation drive capability in a 50 nm spectral range

By enhancing excitonic absorption in a new design of a polarization independent EA modulator, a 50 nm flat absorption spectrum, 42 GHz bandwidth devices together with 14-30 dB/V modulation sensitivity are obtained for 75 /spl mu/m long devices.

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Bibliographic Details
Main Authors: Le Pallec, M., Decobert, J., Kazmierski, D., Ramdane, A., El Dahdah, N., Blache, F., Provost, J.-G., Landreau, J., Barthe, F., Lagay, N.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Applied sciences
Bandwidth
Bit rate
Bonding
Capacitance
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Indium phosphide
Integrated optoelectronics. Optoelectronic circuits
Low voltage
Microwave and submillimeter wave devices, electron transfer devices
Optical and optoelectronic circuits
Optical polarization
Quantum well devices
Semiconductor device packaging
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Description
Summary:By enhancing excitonic absorption in a new design of a polarization independent EA modulator, a 50 nm flat absorption spectrum, 42 GHz bandwidth devices together with 14-30 dB/V modulation sensitivity are obtained for 75 /spl mu/m long devices.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2004.1442791