Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors

For the first time, the effects of poly depletion on the RF noise performance of advanced CMOS transistors are reported and analyzed. Based on measurements and physical device simulations we quantify the increasing danger of poly gate depletion with downscaling on the RF noise parameters of CMOS dev...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-01, Vol.53 (1), p.153-157
Main Authors: Nuttinck, S., Scholten, A.J., Tiemeijer, L.F., Cubaynes, F., Dachs, C., Detcheverry, C., Hijzen, E.A.
Format: Article
Language:English
Subjects:
Applied sciences
CMOS
CMOS integrated circuits
Depletion
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Exact sciences and technology
Gate depletion
Integrated circuits
MOSFETs
NMOS
Noise
Radio frequencies
RF noise
Semiconductor device noise
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Transistors
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Summary:For the first time, the effects of poly depletion on the RF noise performance of advanced CMOS transistors are reported and analyzed. Based on measurements and physical device simulations we quantify the increasing danger of poly gate depletion with downscaling on the RF noise parameters of CMOS devices. While poly depletion does not affect the minimum noise figure, it results in a degradation of the noise matching freedom for RFIC designers. This trend worsens with technology downscaling.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.861246