Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT)

In this paper, the performance of a 25 A 1.7 kV non punch through clustered insulated gate bipolar transistor, fabricated under a manufacturing environment is highlighted. In particular, the influence of the design parameters such as cathode cell spacing and cluster spacing on device performance is...

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Bibliographic Details
Main Authors: VERSHININ, K, SWEET, M, SPULBER, O, HARDIKAR, S, LUTHER-KING, N, DE SOUZA, M. M, SVERDLOFF, S, SANKARA NARAYANAN, E. M, HINCHLEY, D
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Insulated gate bipolar transistors
Other multijunction devices. Power transistors. Thyristors
Power transistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:In this paper, the performance of a 25 A 1.7 kV non punch through clustered insulated gate bipolar transistor, fabricated under a manufacturing environment is highlighted. In particular, the influence of the design parameters such as cathode cell spacing and cluster spacing on device performance is studied experimentally and the results are discussed.
DOI:10.1109/WCT.2004.239985