A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results

A compact bipolar transistor model was presented in Part I that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM but at the same time, from a computational point of view,...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-02, Vol.53 (2), p.287-295
Main Authors: Fregonese, S., Lehmann, S., Zimmer, T., Schroter, M., Celi, D., Ardouin, B., Beckrich, H., Brenner, P., Kraus, W.
Format: Article
Language:English
Subjects:
Analog circuits
Analog high-frequency circuit design
Analog integrated circuits
Applied sciences
Bipolar transistors
Circuit properties
Circuits
compact transistor modeling
Computational efficiency
Computer simulation
Devices
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
HICUM
Integrated circuit design
Mathematical models
parameter extraction
Semiconductor device modeling
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanides
SPICE
Theoretical study. Circuits analysis and design
Transistors
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Summary:A compact bipolar transistor model was presented in Part I that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM but at the same time, from a computational point of view, suitable for simulating large circuits. In Part II, a parameter determination procedure is described and demonstrated for a variety of SiGe process technologies.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.862246