The effect of FSG stability at high temperature on stress-induced voiding in Cu dual-damascene interconnects

The effect of FSG film properties as inter-metal dielectrics on stress-induced voiding (SIV) phenomena in Cu dual-damascene interconnects has been investigated with various FSG-films. HDPFSG and PEFSG2 showed less SIV failure than those of PEFSGI and 3. These behaviors of SIV according to FSG films...

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Main Authors: OH, Hyeok-Sang, CHUNG, Juhyuk, LEE, Jung-Woo, KANG, Ki-Ho, PARK, Dea-Gun, HAH, Sangrok, CHO, In-Soo, PARK, Kwang-Myeon
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Compressive stress
Design. Technologies. Operation analysis. Testing
Dielectrics
Electronics
Exact sciences and technology
Gases
Integrated circuit interconnections
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon compounds
Stability
Temperature
Testing
Thermal stresses
Tin
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Summary:The effect of FSG film properties as inter-metal dielectrics on stress-induced voiding (SIV) phenomena in Cu dual-damascene interconnects has been investigated with various FSG-films. HDPFSG and PEFSG2 showed less SIV failure than those of PEFSGI and 3. These behaviors of SIV according to FSG films agree well with desorbed amount of hydrogen, oxygen and fluorine ions from FSG films at high temperature over 400/spl deg/C. The result of SIMS analysis suggests that SIV phenomena are improved by application of stable FSG film without desorption at high temperature such as HDPFSG and PEFSG2 used in this work.
DOI:10.1109/IITC.2004.1345671