High performance Cu interconnects capped with full-coverage ALD TaNx layer for Cu/low-k (k/spl sim/2.5) metallization

Performance of Cu dual damascene interconnects with a full coverage ALD TaNx cap layer coating on the top surface of Cu line has been investigated. With deposition process that generates different ALD TaNx film properties on Cu and low-k dielectrics, 100% yield of line-to-line leakage can be achieve...

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Main Authors: Hsien-Ming Lee, Lin, J.C., Peng, C.H., Pan, S.C., Huang, C.L., Su, L.L., Hsieh, C.H., Shue, W.S., LIang, M.S.
Format: Conference Proceeding
Language:English
Subjects:
Adhesives
Applied sciences
Atomic layer deposition
Coatings
Delay
Design. Technologies. Operation analysis. Testing
Dielectric substrates
Electromigration
Electronics
Exact sciences and technology
Integrated circuits
Leakage current
Metallization
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Testing
Transmission electron microscopy
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Summary:Performance of Cu dual damascene interconnects with a full coverage ALD TaNx cap layer coating on the top surface of Cu line has been investigated. With deposition process that generates different ALD TaNx film properties on Cu and low-k dielectrics, 100% yield of line-to-line leakage can be achieved. ALD TaNx cap layer can improve electromigration lifetime by more than 3 times due to improvement of the interface between Cu and cap layer which actually suppress the Cu surface migration without degradation of stress migration performance. This work demonstrates that ALD TaNx cap layer can be successfully integrated with Cu/low-k (k/spl sim/2.5) metallization with potential5% reduction in RC delay as compared to conventional cap layer.
DOI:10.1109/IITC.2004.1345690