Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology

• Main Authors: Edelstein, D., Davis, C., Clevenger, L., Yoon, M., Cowley, A., Nogami, T., Rathore, H., Agarwala, B., Arai, S., Carbone, A., Chanda, K., Cohen, S., Cote, W., Cullinan, M., Dalton, T., Das, S., Davis, P., Demarest, J., Dunn, D., Dziobkowski, C., Filippi, R., Fitzsimmons, J., Flaitz, P., Gates, S., Gill, J., Grill, A., Hawken, D., Ida, K., Klaus, D., Klymko, N., Lane, M., Lane, S., Lee, J., Landers, W., Li, W.-K., Lin, Y.-H., Liniger, E., Liu, X.-H., Madan, A., Malhotra, S., Martin, J., Molis, S., Muzzy, C., Nguyen, D., Nguyen, S., Ono, M., Parks, C., Questad, D., Restaino, D., Sakamoto, A., Shaw, T., Shimooka, Y., Simon, A., Simonyi, E., Tempest, S., Van Kleeck, T., Vogt, S., Wang, Y.-Y., Wille, W., Wright, J., Yang, C.-C., Ivers, T.
• Format: Conference Proceeding
• Language: English
• Subjects: Applied sciences; Artificial intelligence; Capacitance; CMOS technology; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Integrated circuit interconnections; Integrated circuit reliability; Integrated circuits; Manufacturing; Materials reliability; Reliability engineering; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switches; Wiring
• DOI: 10.1109/IITC.2004.1345750

We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. Results are presented on every aspect of BEOL and chip-package reliability, yields, low-k film parameters, BEOL capacitances and circuit delays on functional chips. All results meet or exceed our concurrent 90 nm Cu/FTEOS technology, and support extendibility to 65 nm.