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Highly efficient power amplifier for CDMA base stations using Doherty configuration
We have extended the classical Doherty amplifier to support CDMA base station power amplifiers that require high efficiency and good linearity. At first, we have estimated three transistors, Motorola's MRF21085, MRF5S21090 and MRF5P21180 LDMOS's, to confirm the suitability for Doherty oper...
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| container_end_page | 536 Vol.2 |
| container_issue | |
| container_start_page | 533 |
| container_title | |
| container_volume | 2 |
| creator | CHA, Jeonghyeon KIM, Jangheon KIM, Bumman JONG SUNG LEE SANG HOON KIM |
| description | We have extended the classical Doherty amplifier to support CDMA base station power amplifiers that require high efficiency and good linearity. At first, we have estimated three transistors, Motorola's MRF21085, MRF5S21090 and MRF5P21180 LDMOS's, to confirm the suitability for Doherty operation. Since the MRF21085 transistor is not suitable, we have excluded it. Two 2.14GHz high power Doherty amplifiers are implemented using two MRF5S21090 and a MRF5P21180, respectively, and are optimized at 40W for high efficiency and good linearity using IS95A 8FA CDMA signal. The performances of the Doherty amplifiers are compared with a conventional balanced class AB amplifier using two MRF5S21090. At 40W average output power, the MRF5S21090 and MRF5P21180 Doherty amplifiers deliver the efficiencies of 34.8% and 40.0%, which represent 11.2% and 16.4% enhancements, respectively, compared to the conventional amplifier. The linearities of all the amplifiers are adjusted to about -31dBc. |
| doi_str_mv | 10.1109/MWSYM.2004.1336033 |
| format | conference_proceeding |
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At first, we have estimated three transistors, Motorola's MRF21085, MRF5S21090 and MRF5P21180 LDMOS's, to confirm the suitability for Doherty operation. Since the MRF21085 transistor is not suitable, we have excluded it. Two 2.14GHz high power Doherty amplifiers are implemented using two MRF5S21090 and a MRF5P21180, respectively, and are optimized at 40W for high efficiency and good linearity using IS95A 8FA CDMA signal. The performances of the Doherty amplifiers are compared with a conventional balanced class AB amplifier using two MRF5S21090. At 40W average output power, the MRF5S21090 and MRF5P21180 Doherty amplifiers deliver the efficiencies of 34.8% and 40.0%, which represent 11.2% and 16.4% enhancements, respectively, compared to the conventional amplifier. The linearities of all the amplifiers are adjusted to about -31dBc.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 0780383311</identifier><identifier>ISBN: 9780780383319</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.2004.1336033</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Base stations ; Circuit properties ; Circuit testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; High power amplifiers ; Impedance ; Linearity ; Microwave amplifiers ; Multiaccess communication ; Operational amplifiers ; Power amplifiers ; Power generation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. 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No.04CH37535)</title><addtitle>MWSYM</addtitle><description>We have extended the classical Doherty amplifier to support CDMA base station power amplifiers that require high efficiency and good linearity. At first, we have estimated three transistors, Motorola's MRF21085, MRF5S21090 and MRF5P21180 LDMOS's, to confirm the suitability for Doherty operation. Since the MRF21085 transistor is not suitable, we have excluded it. Two 2.14GHz high power Doherty amplifiers are implemented using two MRF5S21090 and a MRF5P21180, respectively, and are optimized at 40W for high efficiency and good linearity using IS95A 8FA CDMA signal. The performances of the Doherty amplifiers are compared with a conventional balanced class AB amplifier using two MRF5S21090. At 40W average output power, the MRF5S21090 and MRF5P21180 Doherty amplifiers deliver the efficiencies of 34.8% and 40.0%, which represent 11.2% and 16.4% enhancements, respectively, compared to the conventional amplifier. The linearities of all the amplifiers are adjusted to about -31dBc.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Base stations</subject><subject>Circuit properties</subject><subject>Circuit testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>High power amplifiers</subject><subject>Impedance</subject><subject>Linearity</subject><subject>Microwave amplifiers</subject><subject>Multiaccess communication</subject><subject>Operational amplifiers</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>0780383311</isbn><isbn>9780780383319</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFkMtOwzAURC0eEqX0B2DjDcsU31wncZZVeRSpFYuCgFXl2NetUZpEdirUv6eiSMxmRjqjWQxj1yDGAKK8W7wvPxfjVAg5BsRcIJ6wQZoVeVKkkJ-yS1EogQoR4IwNBMgyyWX2ccFGMX6Jg2QmAbIBW878elPvOTnnjaem5137TYHrbVd75w_JtYFP7xcTXulIPPa6920T-S76Zs3v2w2Ffs9N2zi_3oVfeMXOna4jjf58yN4eH16ns2T-8vQ8ncwTD6D6RGoQghykWNrMVtqqFEiigqpSeUlKobHokLRFU4mSjFW5EYCVFaUsiHDIbo-7nY5G1y7oxvi46oLf6rBfQSGzIlXy0Ls59jwR_ePjb_gDonFgWA</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>CHA, Jeonghyeon</creator><creator>KIM, Jangheon</creator><creator>KIM, Bumman</creator><creator>JONG SUNG LEE</creator><creator>SANG HOON KIM</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>Highly efficient power amplifier for CDMA base stations using Doherty configuration</title><author>CHA, Jeonghyeon ; KIM, Jangheon ; KIM, Bumman ; JONG SUNG LEE ; SANG HOON KIM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-4a100ef1239d5dbad821e4381bb869e883cd3f3ead3cb09ecd86c013bd0947ee3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Base stations</topic><topic>Circuit properties</topic><topic>Circuit testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>High power amplifiers</topic><topic>Impedance</topic><topic>Linearity</topic><topic>Microwave amplifiers</topic><topic>Multiaccess communication</topic><topic>Operational amplifiers</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>CHA, Jeonghyeon</creatorcontrib><creatorcontrib>KIM, Jangheon</creatorcontrib><creatorcontrib>KIM, Bumman</creatorcontrib><creatorcontrib>JONG SUNG LEE</creatorcontrib><creatorcontrib>SANG HOON KIM</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHA, Jeonghyeon</au><au>KIM, Jangheon</au><au>KIM, Bumman</au><au>JONG SUNG LEE</au><au>SANG HOON KIM</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Highly efficient power amplifier for CDMA base stations using Doherty configuration</atitle><btitle>2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)</btitle><stitle>MWSYM</stitle><date>2004</date><risdate>2004</risdate><volume>2</volume><spage>533</spage><epage>536 Vol.2</epage><pages>533-536 Vol.2</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>0780383311</isbn><isbn>9780780383319</isbn><abstract>We have extended the classical Doherty amplifier to support CDMA base station power amplifiers that require high efficiency and good linearity. At first, we have estimated three transistors, Motorola's MRF21085, MRF5S21090 and MRF5P21180 LDMOS's, to confirm the suitability for Doherty operation. Since the MRF21085 transistor is not suitable, we have excluded it. Two 2.14GHz high power Doherty amplifiers are implemented using two MRF5S21090 and a MRF5P21180, respectively, and are optimized at 40W for high efficiency and good linearity using IS95A 8FA CDMA signal. The performances of the Doherty amplifiers are compared with a conventional balanced class AB amplifier using two MRF5S21090. At 40W average output power, the MRF5S21090 and MRF5P21180 Doherty amplifiers deliver the efficiencies of 34.8% and 40.0%, which represent 11.2% and 16.4% enhancements, respectively, compared to the conventional amplifier. The linearities of all the amplifiers are adjusted to about -31dBc.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/MWSYM.2004.1336033</doi></addata></record> |
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| identifier | ISSN: 0149-645X |
| ispartof | 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004, Vol.2, p.533-536 Vol.2 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_17457284 |
| source | IEEE Xplore All Conference Series |
| subjects | Amplifiers Applied sciences Base stations Circuit properties Circuit testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology High power amplifiers Impedance Linearity Microwave amplifiers Multiaccess communication Operational amplifiers Power amplifiers Power generation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Highly efficient power amplifier for CDMA base stations using Doherty configuration |
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