RF-performance of thick damascene Cu interconnect on silicon

The performance of 2 /spl mu/m thick damascene Cu lines embedded in low K material are evaluated. The process is well control over a 200 mm wafer, provided that tiling is used. A minimum linewidth of 560 nm is achieved. The RF performance of substrate and metal lines in the 1 - 100 GHz frequency ran...

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Bibliographic Details
Main Authors: van Noort, W.D., Detcheverry, C., Jansman, A.B.M., Verheijden, G., Bancken, P., Daamen, R., Nguyen, V., Havens, R.J.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Circuit properties
Conductivity
Coplanar waveguides
Copper
Design. Technologies. Operation analysis. Testing
Dielectric substrates
Electric resistance
Electric, optical and optoelectronic circuits
Electrical resistance measurement
Electronics
Exact sciences and technology
Integrated circuit interconnections
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Process control
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
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Summary:The performance of 2 /spl mu/m thick damascene Cu lines embedded in low K material are evaluated. The process is well control over a 200 mm wafer, provided that tiling is used. A minimum linewidth of 560 nm is achieved. The RF performance of substrate and metal lines in the 1 - 100 GHz frequency range is investigated with coplanar waveguides. Various substrates were used with resistivities ranging from 3-5 /spl Omega/-cm to 4-5k/spl Omega/-cm. With a properly treated substrate, RF losses are only determined by AC series resistance of the metal lines yielding very low losses of 1.7 dB/cm at 10 GHz.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2004.1338899