A 3.3V 4Gb four-level NAND flash memory with 90nm CMOS technology

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Bibliographic Details
Main Authors: LEE, Seungjae, LEE, Young-Taek, KIM, Hyung-Suk, HUR, Sung-Hoi, SUH, Kang-Deog, HAN, Wook-Kee, KIM, Dong-Hwan, KIM, Moo-Sung, MOON, Seung-Hyun, HYUN CHUL CHO, LEE, Jung-Woo, BYEON, Dae-Seok, LIM, Young-Ho
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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DOI:10.1109/ISSCC.2004.1332589