Loading…

A 3.3V 4Gb four-level NAND flash memory with 90nm CMOS technology

Saved in:
Bibliographic Details
Main Authors: LEE, Seungjae, LEE, Young-Taek, KIM, Hyung-Suk, HUR, Sung-Hoi, SUH, Kang-Deog, HAN, Wook-Kee, KIM, Dong-Hwan, KIM, Moo-Sung, MOON, Seung-Hyun, HYUN CHUL CHO, LEE, Jung-Woo, BYEON, Dae-Seok, LIM, Young-Ho
Format: Conference Proceeding
Language:English
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 53
container_issue
container_start_page 52
container_title
container_volume
creator LEE, Seungjae
LEE, Young-Taek
KIM, Hyung-Suk
HUR, Sung-Hoi
SUH, Kang-Deog
HAN, Wook-Kee
KIM, Dong-Hwan
KIM, Moo-Sung
MOON, Seung-Hyun
HYUN CHUL CHO
LEE, Jung-Woo
BYEON, Dae-Seok
LIM, Young-Ho
description
doi_str_mv 10.1109/ISSCC.2004.1332589
format conference_proceeding
fullrecord <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_17457657</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>17457657</sourcerecordid><originalsourceid>FETCH-LOGICAL-p115t-cda7176611193c7237c879be3b89939bc54912b1135a142bc42b1ae21c5082b53</originalsourceid><addsrcrecordid>eNotjM1KxDAYAAMiqOu-gKdcPLbmy5c0ybFUXRfW3UPV65LE1Fb6R1OVvr0LOjDMbQi5AZYCMHO3LcuiSDljIgVELrU5I1dMaYaaZyq7IOsYP9kJIQXT4pLkOcUU36jYOFoNX1PShu_Q0n2-v6dVa2NNu9AN00J_mrmmhvUdLZ4PJZ2Dr_uhHT6Wa3Je2TaG9X9X5PXx4aV4SnaHzbbId8kIIOfEv1sFKssAwKBXHJXXyriAThuDxnkpDHAHgNKC4M6fBBs4eMk0dxJX5PbvO9robVtNtvdNPI5T09lpOYISUmVS4S8GY0hj</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A 3.3V 4Gb four-level NAND flash memory with 90nm CMOS technology</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>LEE, Seungjae ; LEE, Young-Taek ; KIM, Hyung-Suk ; HUR, Sung-Hoi ; SUH, Kang-Deog ; HAN, Wook-Kee ; KIM, Dong-Hwan ; KIM, Moo-Sung ; MOON, Seung-Hyun ; HYUN CHUL CHO ; LEE, Jung-Woo ; BYEON, Dae-Seok ; LIM, Young-Ho</creator><creatorcontrib>LEE, Seungjae ; LEE, Young-Taek ; KIM, Hyung-Suk ; HUR, Sung-Hoi ; SUH, Kang-Deog ; HAN, Wook-Kee ; KIM, Dong-Hwan ; KIM, Moo-Sung ; MOON, Seung-Hyun ; HYUN CHUL CHO ; LEE, Jung-Woo ; BYEON, Dae-Seok ; LIM, Young-Ho</creatorcontrib><edition>First edition</edition><identifier>ISBN: 0780382676</identifier><identifier>ISBN: 9780780382671</identifier><identifier>DOI: 10.1109/ISSCC.2004.1332589</identifier><language>eng</language><publisher>Piscataway, New Jersey: IEEE</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><creationdate>2004</creationdate><rights>2006 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,780,784,789,4050,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=17457657$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LEE, Seungjae</creatorcontrib><creatorcontrib>LEE, Young-Taek</creatorcontrib><creatorcontrib>KIM, Hyung-Suk</creatorcontrib><creatorcontrib>HUR, Sung-Hoi</creatorcontrib><creatorcontrib>SUH, Kang-Deog</creatorcontrib><creatorcontrib>HAN, Wook-Kee</creatorcontrib><creatorcontrib>KIM, Dong-Hwan</creatorcontrib><creatorcontrib>KIM, Moo-Sung</creatorcontrib><creatorcontrib>MOON, Seung-Hyun</creatorcontrib><creatorcontrib>HYUN CHUL CHO</creatorcontrib><creatorcontrib>LEE, Jung-Woo</creatorcontrib><creatorcontrib>BYEON, Dae-Seok</creatorcontrib><creatorcontrib>LIM, Young-Ho</creatorcontrib><title>A 3.3V 4Gb four-level NAND flash memory with 90nm CMOS technology</title><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><isbn>0780382676</isbn><isbn>9780780382671</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjM1KxDAYAAMiqOu-gKdcPLbmy5c0ybFUXRfW3UPV65LE1Fb6R1OVvr0LOjDMbQi5AZYCMHO3LcuiSDljIgVELrU5I1dMaYaaZyq7IOsYP9kJIQXT4pLkOcUU36jYOFoNX1PShu_Q0n2-v6dVa2NNu9AN00J_mrmmhvUdLZ4PJZ2Dr_uhHT6Wa3Je2TaG9X9X5PXx4aV4SnaHzbbId8kIIOfEv1sFKssAwKBXHJXXyriAThuDxnkpDHAHgNKC4M6fBBs4eMk0dxJX5PbvO9robVtNtvdNPI5T09lpOYISUmVS4S8GY0hj</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>LEE, Seungjae</creator><creator>LEE, Young-Taek</creator><creator>KIM, Hyung-Suk</creator><creator>HUR, Sung-Hoi</creator><creator>SUH, Kang-Deog</creator><creator>HAN, Wook-Kee</creator><creator>KIM, Dong-Hwan</creator><creator>KIM, Moo-Sung</creator><creator>MOON, Seung-Hyun</creator><creator>HYUN CHUL CHO</creator><creator>LEE, Jung-Woo</creator><creator>BYEON, Dae-Seok</creator><creator>LIM, Young-Ho</creator><general>IEEE</general><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>A 3.3V 4Gb four-level NAND flash memory with 90nm CMOS technology</title><author>LEE, Seungjae ; LEE, Young-Taek ; KIM, Hyung-Suk ; HUR, Sung-Hoi ; SUH, Kang-Deog ; HAN, Wook-Kee ; KIM, Dong-Hwan ; KIM, Moo-Sung ; MOON, Seung-Hyun ; HYUN CHUL CHO ; LEE, Jung-Woo ; BYEON, Dae-Seok ; LIM, Young-Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p115t-cda7176611193c7237c879be3b89939bc54912b1135a142bc42b1ae21c5082b53</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, Seungjae</creatorcontrib><creatorcontrib>LEE, Young-Taek</creatorcontrib><creatorcontrib>KIM, Hyung-Suk</creatorcontrib><creatorcontrib>HUR, Sung-Hoi</creatorcontrib><creatorcontrib>SUH, Kang-Deog</creatorcontrib><creatorcontrib>HAN, Wook-Kee</creatorcontrib><creatorcontrib>KIM, Dong-Hwan</creatorcontrib><creatorcontrib>KIM, Moo-Sung</creatorcontrib><creatorcontrib>MOON, Seung-Hyun</creatorcontrib><creatorcontrib>HYUN CHUL CHO</creatorcontrib><creatorcontrib>LEE, Jung-Woo</creatorcontrib><creatorcontrib>BYEON, Dae-Seok</creatorcontrib><creatorcontrib>LIM, Young-Ho</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LEE, Seungjae</au><au>LEE, Young-Taek</au><au>KIM, Hyung-Suk</au><au>HUR, Sung-Hoi</au><au>SUH, Kang-Deog</au><au>HAN, Wook-Kee</au><au>KIM, Dong-Hwan</au><au>KIM, Moo-Sung</au><au>MOON, Seung-Hyun</au><au>HYUN CHUL CHO</au><au>LEE, Jung-Woo</au><au>BYEON, Dae-Seok</au><au>LIM, Young-Ho</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 3.3V 4Gb four-level NAND flash memory with 90nm CMOS technology</atitle><date>2004</date><risdate>2004</risdate><spage>52</spage><epage>53</epage><pages>52-53</pages><isbn>0780382676</isbn><isbn>9780780382671</isbn><cop>Piscataway, New Jersey</cop><pub>IEEE</pub><doi>10.1109/ISSCC.2004.1332589</doi><tpages>2</tpages><edition>First edition</edition></addata></record>
fulltext fulltext
identifier ISBN: 0780382676
ispartof
issn
language eng
recordid cdi_pascalfrancis_primary_17457657
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title A 3.3V 4Gb four-level NAND flash memory with 90nm CMOS technology
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T16%3A21%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%203.3V%204Gb%20four-level%20NAND%20flash%20memory%20with%2090nm%20CMOS%20technology&rft.au=LEE,%20Seungjae&rft.date=2004&rft.spage=52&rft.epage=53&rft.pages=52-53&rft.isbn=0780382676&rft.isbn_list=9780780382671&rft_id=info:doi/10.1109/ISSCC.2004.1332589&rft_dat=%3Cpascalfrancis%3E17457657%3C/pascalfrancis%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p115t-cda7176611193c7237c879be3b89939bc54912b1135a142bc42b1ae21c5082b53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true