MEMS tunable capacitors and switches for RF applications

• Main Authors: Rijks, T.G.S.M., van Beek, J.T.M., Steeneken, P.G., Ulenaers, M.J.E., van Eerd, P., Den Toonder, J.M.J., van Dijken, A.R., De Coster, J., Puers, R., Weekamp, J.W., Scheer, J.M., Jourdain, A., Tilmans, H.A.C.
• Format: Conference Proceeding
• Language: English
• Subjects: Applied sciences; Capacitors; Communication switching; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; Hardware; Input-output equipment; Magnetic devices; Manufacturing industries; Micro- and nanoelectromechanical devices (mems/nems); Micromechanical devices; Q factor; Radio frequency; Radiofrequency microelectromechanical systems; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switches; Thin film inductors; Tuning
• DOI: 10.1109/ICMEL.2004.1314557

RF MEMS capacitive switches and tunable capacitors have been realized in an industrialized thin-film process developed for manufacturing high-quality inductors and capacitors. Combining integrated passives with high-performance tuning and switching elements on the same die offers a potential for building a new generation of RF front-ends for hand-held mobile communication. Capacitive switches with an insertion loss of 0.4 dB and an isolation of 17 dB at 1 GHz have been demonstrated. Dual-gap relay type tunable capacitors have been fabricated that show a continuous and reversible tuning ratio of 12 together with a quality factor larger than 150 at frequencies higher than 0.5 GHz. These are the highest tuning ratio and quality factor reported to date. A 0-level packaging concept that is compatible with the fabrication technology has been adopted.