Inductor over MOSFET: Operation and theoretical study of a CMOS RF three-dimensional structure

In this paper we examine the operation of a structure that consists of an integrated inductor placed over a MOSFET within the same silicon die. This setup forms a single-chip, three-dimensional analog RF topology and was firstly introduced by the authors in 2002. The structure takes advantage of an...

Full description

Saved in:
Bibliographic Details
Main Authors: Papananos, Y., Nastos, N.
Format: Conference Proceeding
Language:English
Subjects:
Active inductors
Applied sciences
Circuit synthesis
Costs
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuit modeling
Integrated circuits
Interference
Magnetic devices
Microelectronics
MOSFET circuits
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Topology
Transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper we examine the operation of a structure that consists of an integrated inductor placed over a MOSFET within the same silicon die. This setup forms a single-chip, three-dimensional analog RF topology and was firstly introduced by the authors in 2002. The structure takes advantage of an idle metal layer above active circuits and uses it for the implementation of an inductor. As a consequence, the total area of the system's analog part shrinks, the integrated inductor usage becomes more cost effective: but the interference between inductor and transistor increases.
DOI:10.1109/ICMEL.2004.1314879