Low k damage control & its reliability for organic hybrid dual damascene

A hybrid dual damascene interconnect approach with organic ultra-low-k for gap filling has been demonstrated. The traditional PR approach with via-first process for dual damascene suffers from ashing damage for CVD ultra-low-k. Our approach is able to circumvent the issues mentioned above without in...

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Bibliographic Details
Main Authors: Su, Y.N., Shieh, J.H., Hsu, P.F., Lin, K.C., Chiou, W.C., Kuo, H.H., Tao, H.J., Liang, M.S.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Ash
Design. Technologies. Operation analysis. Testing
Dielectric materials
Electronics
Etching
Exact sciences and technology
Filling
Integrated circuits
Leakage current
Manufacturing industries
Microelectronic fabrication (materials and surfaces technology)
Planarization
Research and development
Semiconductor device manufacture
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermal stability
Online Access:Request full text
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Summary:A hybrid dual damascene interconnect approach with organic ultra-low-k for gap filling has been demonstrated. The traditional PR approach with via-first process for dual damascene suffers from ashing damage for CVD ultra-low-k. Our approach is able to circumvent the issues mentioned above without introducing process complication. Good sheet resistance control is obtained for trench etch without a middle stop layer. And good via resistance yield with good thermal stability is obtained as well. 21% of RC product reduction is obtained when it is compared with the PR approach for CVD ultra-low-k.
DOI:10.1109/IPFA.2004.1345544