A review of laser induced techniques for microelectronic failure analysis

Recent developments have seen the use of scanning focused near infra-red (NIR) laser beams for fault localization and defect characterization in microelectronic failure analysis. Fault localization techniques are based on thermal stimulation and include power alteration techniques such as OBIRCH, TI...

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Bibliographic Details
Main Authors: Phang, J.C.H., Chan, D.S.H., Palaniappan, M., Chin, J.M., Davis, B., Bruce, M., Wilcox, J., Gilfeather, G., Chua, C.M., Koh, L.S., Ng, H.Y., Tan, S.H.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Circuit faults
Doping
Electronics
Exact sciences and technology
Failure analysis
Instruments
Integrated circuit reliability
Laser beams
Microelectronics
Microscopy
Power lasers
Surface emitting lasers
Testing, measurement, noise and reliability
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Summary:Recent developments have seen the use of scanning focused near infra-red (NIR) laser beams for fault localization and defect characterization in microelectronic failure analysis. Fault localization techniques are based on thermal stimulation and include power alteration techniques such as OBIRCH, TIVA, SEI, and tester based techniques such as RIL-SDL. Defect characterization techniques are based on carrier stimulation and include OBIC, SCOBIC and LIVA. A review of the concepts and application of these techniques together with the instrumentation requirements to effectively deploy these techniques are presented in this paper.
DOI:10.1109/IPFA.2004.1345617