Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: evidence for lateral inter-dot transport

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Bibliographic Details
Published in:Semiconductor science and technology 2006-04, Vol.21 (4), p.527-531
Main Authors: Shamirzaev, T S, Gilinsky, A M, Kalagin, A K, Toropov, A I, Gutakovskii, A K, Zhuravlev, K S
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/21/4/019