Simultaneous enhancement of the second- and third-harmonic generations in one-dimensional semiconductor photonic crystals

We report on observation of simultaneous strong enhancements of second-harmonic generation (SHG) and third-harmonic generation (THG) in visible spectra region in a one-dimensional ZnSe-ZnMgS semiconductor photonic crystal. These enhancements come from phase matching and a high density of modes near...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of quantum electronics 2006-04, Vol.42 (4), p.447-452
Main Authors: Hui Yang, Ping Xie, Chan, S.K., Weixin Lu, Zhao-Qing Zhang, Sou, I.K., Wong, G.K.L., Wong, K.S.
Format: Article
Language:English
Subjects:
Birefringence
Computational efficiency
Conversion
Crystalline materials
Dispersion
Exact sciences and technology
Ferroelectric materials
Frequency conversion
harmonic generation, including high-order harmonic generation
Fundamental areas of phenomenology (including applications)
Mathematical analysis
Multiharmonic generation
multilayer material
Nonlinear optics
Optical frequency conversion
Optical harmonic generation
Optical materials
Optics
Personal communication networks
phase matching
Photonic band gap
Photonic bandgap materials
photonic crystal
Photonic crystals
Physics
Pump lasers
Quantum electronics
Semiconductors
Spectra
Thick films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on observation of simultaneous strong enhancements of second-harmonic generation (SHG) and third-harmonic generation (THG) in visible spectra region in a one-dimensional ZnSe-ZnMgS semiconductor photonic crystal. These enhancements come from phase matching and a high density of modes near the photonic band edge. Our result shows that the THG is due to direct /spl chi//sup (3)/ process instead of the cascaded two-step /spl chi//sup (2)/ process. Measured forward SH conversion efficiency close to 1% for only a few microns thick film demonstrates potential device applications. Theoretical calculations are in good agreement with the experimental measurements.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2006.871552