Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-k gate dielectrics and TiN gate

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-04, Vol.53 (4), p.836-843
Main Authors: VON HAARTMAN, Martin, GUNNAR MALM, B, ÖSTLING, Mikael
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Materials
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.870276