The comparison of modern SiC power devices

A comparative study on high voltage MOSFET and IGBT devices (internal cell electrical characteristics) demonstrate the similarity of both devices. This paper presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for V/sub GS/...

Full description

Saved in:
Bibliographic Details
Main Authors: Avram, M., Brezeanu, G., Poenar, D.P.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Bipolar transistors
Computer science
control theory
systems
Conductivity
Exact sciences and technology
Insulated gate bipolar transistors
MOSFET circuits
Power dissipation
Power MOSFET
Semiconductor materials
Silicon carbide
Substrates
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A comparative study on high voltage MOSFET and IGBT devices (internal cell electrical characteristics) demonstrate the similarity of both devices. This paper presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for V/sub GS/=-80 V), with a specific on-resistance as low as 13 mWcm/sup 2/, 100 - 200 lower than similar IGBT on Si. Comparing the circuit performance to that of a SiC IGBT, it turns out is almost twice faster than the MOSFET.
DOI:10.1109/ICIT.2004.1490341