Photoluminescence properties of GaN with dislocations induced by plastic deformation: Group III Nitrides, SiC, and ZnO

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Bibliographic Details
Published in:Journal of electronic materials 2006, Vol.35 (4), p.717-721
Main Authors: YONENAGA, Ichiro, MAKING, Hisao, ITOH, Shun, GOTO, Takenari, YAO, Takafumi
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Deformation and plasticity (including yield, ductility, and superplasticity)
Exact sciences and technology
Iii-v semiconductors
Mechanical and acoustical properties of condensed matter
Mechanical properties of solids
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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ISSN:0361-5235
1543-186X