Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films

This letter investigated the reproducible bistable resistance switching characteristics of a single-layer organic device based on 8-hydroquinoline aluminum (Alq3) fabricated by spin coating. By controlling the ON-state current through the Alq3 films, it has been possible to achieve various resistanc...

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Bibliographic Details
Published in:IEEE electron device letters 2006-05, Vol.27 (5), p.354-356
Main Authors: TU, Chia-Hsun, LAI, Yi-Sheng, KWONG, Dim-Lee
Format: Article
Language:English
Subjects:
Aluminum
Applied sciences
Circuit properties
Coatings
Design. Technologies. Operation analysis. Testing
Devices
Electric potential
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Electrons
Exact sciences and technology
Ferroelectric materials
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Magnetic materials
Memory device
Optical devices
Optical polymers
organic
Organic light emitting diodes
resistance switch
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spin coating
Storage and reproduction of information
Switches
Switching
Switching, multiplexing, switched capacity circuits
Threshold currents
Voltage
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Summary:This letter investigated the reproducible bistable resistance switching characteristics of a single-layer organic device based on 8-hydroquinoline aluminum (Alq3) fabricated by spin coating. By controlling the ON-state current through the Alq3 films, it has been possible to achieve various resistance states of the films. In addition, the resistance of the ON-state Alq3 films also affects the threshold current and voltage to switch off the device. The independence of the current-injected direction to erase the ON state implies that the filament theory could elucidate the observed phenomenon. The ratio between low- and high-resistance states can reach five orders of magnitude, which will be a potential material for nonvolatile memory application.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.872915