Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices. Nitride-based heterostructure field-effect transistors can be biased at high drain voltages, up to and exceeding 100 V, which results in hig...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2006-05, Vol.54 (5), p.2061-2067
Main Authors: Trew, R.J., Yueying Liu, Bilbro, L., Weiwei Kuang, Vetury, R., Shealy, J.B.
Format: Article
Language:English
Subjects:
AlGaN/GaN heterostructure field-effect transistors (HFETs)
Aluminum gallium nitride
Amplifiers
Applied sciences
Circuit properties
Devices
Drains
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
FETs
Gallium nitride
GaN
HEMTs
large-signal operation
Microwave and submillimeter wave devices, electron transfer devices
Microwave devices
Microwaves
MODFETs
nonlinear source resistance
Nonlinearity
Power generation
Radio frequencies
Radio frequency
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Transistors
Voltage
Wide band gap semiconductors
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Summary:Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices. Nitride-based heterostructure field-effect transistors can be biased at high drain voltages, up to and exceeding 100 V, which results in high RF output power. However, the operation of these devices at high drain bias introduces physical phenomena within the device that affect both dc and RF performance. In this study, the existence of a nonlinear source resistance due to space-charge limited current conditions is demonstrated and verified. Inclusion of the nonlinear source resistance in a physics-based device simulator produces excellent agreement between simulated and measured data. The nonlinear source resistance degrades RF performance and limits amplifier linearity.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2006.873627