A low-temperature Si/SiGe impact diode for improved infrared sensing

Si/SiGe quantum well (QW) impact diodes are demonstrated with multiplication up to 200 at 10 V reverse bias between 10-150 K. These diodes are ideal gain structures for use with Si impurity band conduction (IBC) infrared detectors, due to the available integration platform, appropriate low temperatu...

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Bibliographic Details
Main Authors: Meteer, J.A., Eikenberry, S.S., Huffman, J.E., Kan, E.C.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Astronomy
Compound structure devices
Diodes
Electronics
Electrons
Exact sciences and technology
Germanium silicon alloys
Infrared detectors
Optoelectronic devices
P-i-n diodes
Photoconductivity
Semiconductor device noise
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
Temperature
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Description
Summary:Si/SiGe quantum well (QW) impact diodes are demonstrated with multiplication up to 200 at 10 V reverse bias between 10-150 K. These diodes are ideal gain structures for use with Si impurity band conduction (IBC) infrared detectors, due to the available integration platform, appropriate low temperature characteristics, low voltage operation, and low noise multiplication mechanism as required for compatibility with mid- and far infrared detection. Physical characterization, including composition and doping profiles, are obtained from STEM and SIMS analyses. Photocurrent multiplication is measured to confirm our device design.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2004.1367847