Mobility evaluation in high-k devices [MOSFETs]

Fast electron trapping in the high-k gate dielectrics is shown to effectively increase the magnitude of the threshold voltage during the DC measurements of the drain current, which leads to underestimation of the intrinsic channel carrier mobility. An approach based on the pulse I/sub d/-V/sub g/ te...

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Bibliographic Details
Main Authors: Bersuker, G., Zeitzoff, P., Sim, J.H., Lee, B.H., Choi, R., Brown, G., Young, C.D.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Current measurement
Design. Technologies. Operation analysis. Testing
Dielectric measurements
Electron mobility
Electron traps
Electronics
Exact sciences and technology
High K dielectric materials
High-K gate dielectrics
Integrated circuits
Particle measurements
Pulse measurements
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Time measurement
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Summary:Fast electron trapping in the high-k gate dielectrics is shown to effectively increase the magnitude of the threshold voltage during the DC measurements of the drain current, which leads to underestimation of the intrinsic channel carrier mobility. An approach based on the pulse I/sub d/-V/sub g/ technique is proposed to estimate a correction factor to the DC mobility.
DOI:10.1109/IRWS.2004.1422758