Metal emitter SiGe:C HBTs

SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, f/sub T/, but low open base breakdown voltages, BV/sub CEO/, due to the relatively high current gain, h/sub FE/. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-em...

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Bibliographic Details
Main Authors: Donkers, J.J.T.M., Vanhoucke, T., Agarwal, P., Hueting, R.J.E., Meunier-Beillard, P., Vijayaraghavan, M.N., Magnee, P.H.C., Verheijen, M.A., de Kort, R., Slotboom, J.W.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Atomic layer deposition
Bipolar transistors
Cutoff frequency
Electronics
Exact sciences and technology
Germanium silicon alloys
Heterojunction bipolar transistors
Laboratories
Nickel
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicidation
Silicon germanium
Temperature
Transistors
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Summary:SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, f/sub T/, but low open base breakdown voltages, BV/sub CEO/, due to the relatively high current gain, h/sub FE/. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, I/sub B/ without reducing the collector current, I/sub C/. Hence, the BV/sub CEO/ is increased without affecting the f/sub T/. Furthermore, this metal emitter reduces the emitter series resistance, R/sub E/, and increases the f/sub T/ compared with a mono-emitter. SiGe:C HBTs with f/sub T/=230GHz and BV/sub CEO/=1.8V have been realised using a metal emitter in a self-aligned integration scheme.
DOI:10.1109/IEDM.2004.1419121