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Metal emitter SiGe:C HBTs

SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, f/sub T/, but low open base breakdown voltages, BV/sub CEO/, due to the relatively high current gain, h/sub FE/. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-em...

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Main Authors:	Donkers, J.J.T.M., Vanhoucke, T., Agarwal, P., Hueting, R.J.E., Meunier-Beillard, P., Vijayaraghavan, M.N., Magnee, P.H.C., Verheijen, M.A., de Kort, R., Slotboom, J.W.
Format:	Conference Proceeding
Language:	English
Subjects:	Applied sciences Atomic layer deposition Bipolar transistors Cutoff frequency Electronics Exact sciences and technology Germanium silicon alloys Heterojunction bipolar transistors Laboratories Nickel Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicidation Silicon germanium Temperature Transistors
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creator	Donkers, J.J.T.M. Vanhoucke, T. Agarwal, P. Hueting, R.J.E. Meunier-Beillard, P. Vijayaraghavan, M.N. Magnee, P.H.C. Verheijen, M.A. de Kort, R. Slotboom, J.W.
description	SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, f/sub T/, but low open base breakdown voltages, BV/sub CEO/, due to the relatively high current gain, h/sub FE/. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, I/sub B/ without reducing the collector current, I/sub C/. Hence, the BV/sub CEO/ is increased without affecting the f/sub T/. Furthermore, this metal emitter reduces the emitter series resistance, R/sub E/, and increases the f/sub T/ compared with a mono-emitter. SiGe:C HBTs with f/sub T/=230GHz and BV/sub CEO/=1.8V have been realised using a metal emitter in a self-aligned integration scheme.
doi_str_mv	10.1109/IEDM.2004.1419121
format	conference_proceeding
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In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, I/sub B/ without reducing the collector current, I/sub C/. Hence, the BV/sub CEO/ is increased without affecting the f/sub T/. Furthermore, this metal emitter reduces the emitter series resistance, R/sub E/, and increases the f/sub T/ compared with a mono-emitter. SiGe:C HBTs with f/sub T/=230GHz and BV/sub CEO/=1.8V have been realised using a metal emitter in a self-aligned integration scheme.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/IEDM.2004.1419121</doi><tpages>4</tpages></addata></record>
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identifier	ISBN: 0780386841
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language	eng
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Applied sciences Atomic layer deposition Bipolar transistors Cutoff frequency Electronics Exact sciences and technology Germanium silicon alloys Heterojunction bipolar transistors Laboratories Nickel Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicidation Silicon germanium Temperature Transistors
title	Metal emitter SiGe:C HBTs
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