Sige HBT technology with fmax/fT = 350/300 GHz and gate delay below 3.3 ps

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Bibliographic Details
Main Authors: KHATER, M, RIEH, J.-S, SCHONENBERG, K. T, SMITH, P, STEIN, K, STRICKER, A, JENG, S.-J, AHLGREN, D, FREEMAN, G, ADAM, T, CHINTHAKINDI, A, JOHNSON, J, KRISHNASAMY, R, MEGHELLI, M, PAGETTE, F, SANDERSON, D, SCHNABEL, C
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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