Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH3 and thin AlN) and TaN/HfO2 gate stack

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Bibliographic Details
Main Authors: WHANG, S. J, LEE, S. J, FEI GAO, NAN WU, ZHU, C. X, JI SHENG PAN, LEI JUN TANG, KWONG, D. L
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Compound structure devices
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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DOI:10.1109/IEDM.2004.1419140