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Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH3 and thin AlN) and TaN/HfO2 gate stack

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Main Authors:	WHANG, S. J, LEE, S. J, FEI GAO, NAN WU, ZHU, C. X, JI SHENG PAN, LEI JUN TANG, KWONG, D. L
Format:	Conference Proceeding
Language:	English
Subjects:	Applied sciences Compound structure devices Diodes Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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creator	WHANG, S. J LEE, S. J FEI GAO NAN WU ZHU, C. X JI SHENG PAN LEI JUN TANG KWONG, D. L
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doi_str_mv	10.1109/IEDM.2004.1419140
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Applied sciences Compound structure devices Diodes Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH3 and thin AlN) and TaN/HfO2 gate stack
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