High-voltage extension(V/sub BR/ /spl ges/ 800 V) for smart-power SOI-technologies

In this paper the experimental verification for the incorporation of high-voltage devices (/sub BR/ /spl ges/ 800 V) within industrial smart-power SOI technologies of only low blocking capability (/sub BR/ < 150 V) together with properties of a new, ingenious device concept for universal bipolar...

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Bibliographic Details
Main Authors: Rotter, T., Stoisiek, M.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Biomembranes
Circuit properties
CMOS process
CMOS technology
Dielectric devices
Dielectric substrates
Doping
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Etching
Exact sciences and technology
Isolation technology
Silicon
Switching, multiplexing, switched capacity circuits
Voltage
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Description
Summary:In this paper the experimental verification for the incorporation of high-voltage devices (/sub BR/ /spl ges/ 800 V) within industrial smart-power SOI technologies of only low blocking capability (/sub BR/ < 150 V) together with properties of a new, ingenious device concept for universal bipolar switches (UBS) are discussed.
DOI:10.1109/IEDM.2004.1419184