High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels

We have investigated the lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths. The ten 67 nm-wide split channels TFT has best gate control due to its tri-gate structure, and has lowest poly-Si grain boundary defects, which we...

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Bibliographic Details
Main Authors: Yung-Chun Wu, Chun-Yen Chang, Ting-Chang Chang, Po-Tsun Liu, Chi-Shen Chen, Chun-Hao Tu, Hsiao-Wen Zan, Ya-Hsiane Tai, Simon Min Sze
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
CMOS technology
Electric variables
Electrodes
Electronics
Etching
Exact sciences and technology
Leakage current
MOSFET circuits
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Strips
Thin film transistors
Transistors
Voltage
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Summary:We have investigated the lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths. The ten 67 nm-wide split channels TFT has best gate control due to its tri-gate structure, and has lowest poly-Si grain boundary defects, which were passivated by NH/sub 3/ plasma effectively due to its split nano-wires structure. The proposed TFT exhibits high performance electrical characteristics, such as a high ON/OFF current ratio (> 10/sup 9/), a steep subthreshold slope (55) of 137 mV/decade, an absence of drain-induced barrier lowering (DIBL), suppressed kink-effect, and superior reliability.
DOI:10.1109/IEDM.2004.1419289