A 100-W high-gain AlGaN/GaN HEMT power amplifier on a conductive n-SiC substrate for wireless base station applications

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost conductive n-SiC substrate. A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first rep...

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Bibliographic Details
Main Authors: Kanamura, M., Kikkawa, T., Joshin, K.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Amplifiers
Applied sciences
Base stations
Circuit properties
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Gallium nitride
HEMTs
High power amplifiers
Insulation
Power generation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Substrates
Thermal conductivity
Transistors
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Summary:AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost conductive n-SiC substrate. A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first report about the greater than 100 W power performance of the single-chip GaN HEMT that was grown on a conductive substrate.
DOI:10.1109/IEDM.2004.1419296