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A 100-W high-gain AlGaN/GaN HEMT power amplifier on a conductive n-SiC substrate for wireless base station applications
AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost conductive n-SiC substrate. A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first rep...
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| creator | Kanamura, M. Kikkawa, T. Joshin, K. |
| description | AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost conductive n-SiC substrate. A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first report about the greater than 100 W power performance of the single-chip GaN HEMT that was grown on a conductive substrate. |
| doi_str_mv | 10.1109/IEDM.2004.1419296 |
| format | conference_proceeding |
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A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first report about the greater than 100 W power performance of the single-chip GaN HEMT that was grown on a conductive substrate.</description><identifier>ISBN: 0780386841</identifier><identifier>ISBN: 9780780386846</identifier><identifier>DOI: 10.1109/IEDM.2004.1419296</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Aluminum gallium nitride ; Amplifiers ; Applied sciences ; Base stations ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Gallium nitride ; HEMTs ; High power amplifiers ; Insulation ; Power generation ; Semiconductor electronics. Microelectronics. Optoelectronics. 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IEEE International Electron Devices Meeting, 2004</title><addtitle>IEDM</addtitle><description>AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost conductive n-SiC substrate. A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first report about the greater than 100 W power performance of the single-chip GaN HEMT that was grown on a conductive substrate.</description><subject>Aluminum gallium nitride</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Base stations</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitride</subject><subject>HEMTs</subject><subject>High power amplifiers</subject><subject>Insulation</subject><subject>Power generation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon carbide</subject><subject>Substrates</subject><subject>Thermal conductivity</subject><subject>Transistors</subject><isbn>0780386841</isbn><isbn>9780780386846</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFUMtKw0AUHRBBrf0AcTMbl0nvvJLJstTaFlpdWHFZbqYz7UiahJnU4t8breCFwz1wHotDyB2DlDEoRovp4yrlADJlkhW8yC7IDeQahM60ZFdkGOMH9CeVBC2uyWlMGUDyTvd-t0926Gs6rmb4POpB59PVmrbNyQaKh7byzvesqSlS09Tbo-n8p6V18uonNB7L2AXsLHVNoCcfbGVjpCVGS2OHnf-JtX2H-eXxllw6rKId_v0BeXuarifzZPkyW0zGy8QzobqEFxwkLxxqoQpQUgqrSwMlOpNzrbMc0ZVy68AplRkwItfIVabynBXCGS4G5OHc22I0WLmAtfFx0wZ_wPC1Yf00mRKi992ffd5a-y-fNxTf0xhlyQ</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Kanamura, M.</creator><creator>Kikkawa, T.</creator><creator>Joshin, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>A 100-W high-gain AlGaN/GaN HEMT power amplifier on a conductive n-SiC substrate for wireless base station applications</title><author>Kanamura, M. ; Kikkawa, T. ; Joshin, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i135t-2920429fa835905443e8bc0bafc728867aafb4df0f556c0c378a256577193fc23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Aluminum gallium nitride</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Base stations</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium nitride</topic><topic>HEMTs</topic><topic>High power amplifiers</topic><topic>Insulation</topic><topic>Power generation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon carbide</topic><topic>Substrates</topic><topic>Thermal conductivity</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Kanamura, M.</creatorcontrib><creatorcontrib>Kikkawa, T.</creatorcontrib><creatorcontrib>Joshin, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore (Online service)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kanamura, M.</au><au>Kikkawa, T.</au><au>Joshin, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 100-W high-gain AlGaN/GaN HEMT power amplifier on a conductive n-SiC substrate for wireless base station applications</atitle><btitle>IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004</btitle><stitle>IEDM</stitle><date>2004</date><risdate>2004</risdate><spage>799</spage><epage>802</epage><pages>799-802</pages><isbn>0780386841</isbn><isbn>9780780386846</isbn><abstract>AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost conductive n-SiC substrate. A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first report about the greater than 100 W power performance of the single-chip GaN HEMT that was grown on a conductive substrate.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/IEDM.2004.1419296</doi><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 0780386841 |
| ispartof | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.799-802 |
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| language | eng |
| recordid | cdi_pascalfrancis_primary_17806533 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum gallium nitride Amplifiers Applied sciences Base stations Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gallium nitride HEMTs High power amplifiers Insulation Power generation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Substrates Thermal conductivity Transistors |
| title | A 100-W high-gain AlGaN/GaN HEMT power amplifier on a conductive n-SiC substrate for wireless base station applications |
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