45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μn

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Bibliographic Details
Main Authors: HENSON, K, LANDER, R. J. P, BECKX, S, BOULLART, W, COENEGRACHTS, B, VERTOMMEN, J, RICHARD, O, BENDER, H, VANDERVORST, W, KAISER, M, EVERAERT, J.-L, JURCZAK, M, DEMAND, M, BIESEMANS, S, DACHS, C. J. J, KACZER, B, DEWEERD, W, SCHRAM, T, TOKEI, Z, HOOKER, J. C, CUBAYNES, F. N
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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