45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μn

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Main Authors: HENSON, K, LANDER, R. J. P, BECKX, S, BOULLART, W, COENEGRACHTS, B, VERTOMMEN, J, RICHARD, O, BENDER, H, VANDERVORST, W, KAISER, M, EVERAERT, J.-L, JURCZAK, M, DEMAND, M, BIESEMANS, S, DACHS, C. J. J, KACZER, B, DEWEERD, W, SCHRAM, T, TOKEI, Z, HOOKER, J. C, CUBAYNES, F. N
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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creator HENSON, K
LANDER, R. J. P
BECKX, S
BOULLART, W
COENEGRACHTS, B
VERTOMMEN, J
RICHARD, O
BENDER, H
VANDERVORST, W
KAISER, M
EVERAERT, J.-L
JURCZAK, M
DEMAND, M
BIESEMANS, S
DACHS, C. J. J
KACZER, B
DEWEERD, W
SCHRAM, T
TOKEI, Z
HOOKER, J. C
CUBAYNES, F. N
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format conference_proceeding
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ispartof 2004 International Electron Devices Meeting, 2004, p.851-854
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title 45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μn
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