Simulation of carbon nanotube field-effect devices

Ab initio quantum mechanical numerical simulations have been used to study electronic transport in nanoscale electronic devices. We have developed a new code based on self-consistent density-functional tight-binding (DFTB) method and non-equilibrium Green's function (NEGF) formalism. Using this...

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Bibliographic Details
Main Authors: Latessa, L., Pecchia, A., Di Carlo, A., Scarpa, G., Lugli, P.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Boundary conditions
Carbon nanotubes
Coaxial components
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Electrostatics
Exact sciences and technology
Geometry
Green's function methods
Molecular electronics, nanoelectronics
Nanoscale devices
Numerical simulation
Quantum mechanics
Semiconductivity
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Ab initio quantum mechanical numerical simulations have been used to study electronic transport in nanoscale electronic devices. We have developed a new code based on self-consistent density-functional tight-binding (DFTB) method and non-equilibrium Green's function (NEGF) formalism. Using this approach, we investigate the coherent transport properties of a long semiconducting CNT when the source-drain current is modulated by a coaxial gate. Exact boundary conditions for the electrostatic potential in the coaxial gate geometry are taken into account solving in real space a 3D Poisson equation. Results stress the importance of a good electrostatic-design of the gate contact to obtain the same field-effect modulation we have in conventional planar MOSFET.
DOI:10.1109/NANO.2004.1392232