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Simulation of carbon nanotube field-effect devices
Ab initio quantum mechanical numerical simulations have been used to study electronic transport in nanoscale electronic devices. We have developed a new code based on self-consistent density-functional tight-binding (DFTB) method and non-equilibrium Green's function (NEGF) formalism. Using this...
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creator | Latessa, L. Pecchia, A. Di Carlo, A. Scarpa, G. Lugli, P. |
description | Ab initio quantum mechanical numerical simulations have been used to study electronic transport in nanoscale electronic devices. We have developed a new code based on self-consistent density-functional tight-binding (DFTB) method and non-equilibrium Green's function (NEGF) formalism. Using this approach, we investigate the coherent transport properties of a long semiconducting CNT when the source-drain current is modulated by a coaxial gate. Exact boundary conditions for the electrostatic potential in the coaxial gate geometry are taken into account solving in real space a 3D Poisson equation. Results stress the importance of a good electrostatic-design of the gate contact to obtain the same field-effect modulation we have in conventional planar MOSFET. |
doi_str_mv | 10.1109/NANO.2004.1392232 |
format | conference_proceeding |
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We have developed a new code based on self-consistent density-functional tight-binding (DFTB) method and non-equilibrium Green's function (NEGF) formalism. Using this approach, we investigate the coherent transport properties of a long semiconducting CNT when the source-drain current is modulated by a coaxial gate. Exact boundary conditions for the electrostatic potential in the coaxial gate geometry are taken into account solving in real space a 3D Poisson equation. Results stress the importance of a good electrostatic-design of the gate contact to obtain the same field-effect modulation we have in conventional planar MOSFET.</description><identifier>ISBN: 0780385365</identifier><identifier>ISBN: 9780780385368</identifier><identifier>DOI: 10.1109/NANO.2004.1392232</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Boundary conditions ; Carbon nanotubes ; Coaxial components ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Electrostatics ; Exact sciences and technology ; Geometry ; Green's function methods ; Molecular electronics, nanoelectronics ; Nanoscale devices ; Numerical simulation ; Quantum mechanics ; Semiconductivity ; Semiconductor electronics. Microelectronics. Optoelectronics. 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We have developed a new code based on self-consistent density-functional tight-binding (DFTB) method and non-equilibrium Green's function (NEGF) formalism. Using this approach, we investigate the coherent transport properties of a long semiconducting CNT when the source-drain current is modulated by a coaxial gate. Exact boundary conditions for the electrostatic potential in the coaxial gate geometry are taken into account solving in real space a 3D Poisson equation. Results stress the importance of a good electrostatic-design of the gate contact to obtain the same field-effect modulation we have in conventional planar MOSFET.</description><subject>Applied sciences</subject><subject>Boundary conditions</subject><subject>Carbon nanotubes</subject><subject>Coaxial components</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Electrostatics</subject><subject>Exact sciences and technology</subject><subject>Geometry</subject><subject>Green's function methods</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Nanoscale devices</subject><subject>Numerical simulation</subject><subject>Quantum mechanics</subject><subject>Semiconductivity</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Electrostatics</topic><topic>Exact sciences and technology</topic><topic>Geometry</topic><topic>Green's function methods</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Nanoscale devices</topic><topic>Numerical simulation</topic><topic>Quantum mechanics</topic><topic>Semiconductivity</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. 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We have developed a new code based on self-consistent density-functional tight-binding (DFTB) method and non-equilibrium Green's function (NEGF) formalism. Using this approach, we investigate the coherent transport properties of a long semiconducting CNT when the source-drain current is modulated by a coaxial gate. Exact boundary conditions for the electrostatic potential in the coaxial gate geometry are taken into account solving in real space a 3D Poisson equation. Results stress the importance of a good electrostatic-design of the gate contact to obtain the same field-effect modulation we have in conventional planar MOSFET.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/NANO.2004.1392232</doi><tpages>3</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Applied sciences Boundary conditions Carbon nanotubes Coaxial components Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Electrostatics Exact sciences and technology Geometry Green's function methods Molecular electronics, nanoelectronics Nanoscale devices Numerical simulation Quantum mechanics Semiconductivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
title | Simulation of carbon nanotube field-effect devices |
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