Binary addition based on single electron tunneling devices

The ability to control the transport of individual electrons within single electron tunneling based circuits creates the conditions for implementing single electron encoded threshold logic gates. This paper investigates the implementation of binary addition based on such gates. We first propose impl...

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Bibliographic Details
Main Authors: Lageweg, C., Cotofana, S., Vassiliadis, S.
Format: Conference Proceeding
Language:English
Subjects:
Adders
Applied sciences
Capacitors
Circuit properties
Delay
Design. Technologies. Operation analysis. Testing
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Logic circuits
Logic devices
Logic gates
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Single electron transistors
Stochastic processes
Threshold voltage
Tunneling
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Summary:The ability to control the transport of individual electrons within single electron tunneling based circuits creates the conditions for implementing single electron encoded threshold logic gates. This paper investigates the implementation of binary addition based on such gates. We first propose implementations of full adder and 4-bit lookahead carry generator blocks and verify the designs by means of simulation. We then evaluate the area, delay, and power consumption of 16-bit and 64-bit ripple carry and carry-lookahead adders based on these blocks.
DOI:10.1109/NANO.2004.1392340