Three-dimensional simulation of single electron transistors

We present a three-dimensional (3D) approach for the simulation of single electron transistor (SET) in which subregions with different types of confinement are present simultaneously. In particular, we have applied our model, based on the solution of the Schrodinger equation with DFT, to a split gat...

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Bibliographic Details
Main Authors: Fiori, G., Pala, M.G., Iannaccone, G.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Boundary conditions
Capacitance
Density functional theory
Eigenvalues and eigenfunctions
Electronics
Exact sciences and technology
Molecular electronics, nanoelectronics
Nanoelectronics
Poisson equations
Schrodinger equation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon on insulator technology
Single electron transistors
Transistors
Wave functions
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Summary:We present a three-dimensional (3D) approach for the simulation of single electron transistor (SET) in which subregions with different types of confinement are present simultaneously. In particular, we have applied our model, based on the solution of the Schrodinger equation with DFT, to a split gate and a silicon on insulator (SOI) single electron transistor (SET). The solution of the Schrodinger equation with open boundary conditions has allowed us to compute the three-dimensional conductance in the linear response regime.
DOI:10.1109/NANO.2004.1392343