Sb-Se-based phase-change memory device with lower power and higher speed operations

A phase-change material of Sb/sub 65/Se/sub 35/ was newly proposed for the nonvolatile memory applications. The fabricated phase-change memory device using Sb/sub 65/Se/sub 35/ showed a good electrical threshold switching characteristic in the dc current-voltage (I-V) measurement. The programming ti...

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Bibliographic Details
Published in:IEEE electron device letters 2006-06, Vol.27 (6), p.445-447
Main Authors: Sung-Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Kyu-Jeong Choi, Park, Y.-S., Seung-Yun Lee, Byoung-Gon Yu, Myung-Jin Kang, Se-Young Choi, Wuttig, M.
Format: Article
Language:English
Subjects:
Applied sciences
Crystalline materials
Crystallization
Data storage
Devices
Electric power generation
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Fabrication
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Melting
Memory devices
Nonvolatile memory
Phase change memory
Phase change random access memory
phase transition
phase-change random access memory (PRAM)
Plasma applications
Plasma chemistry
Power electronics, power supplies
Programming
Sb-Se alloy
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Switching
Tellurium
Temperature
Volt-ampere characteristics
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Summary:A phase-change material of Sb/sub 65/Se/sub 35/ was newly proposed for the nonvolatile memory applications. The fabricated phase-change memory device using Sb/sub 65/Se/sub 35/ showed a good electrical threshold switching characteristic in the dc current-voltage (I-V) measurement. The programming time for set operation of the memory device decreased from 1 μs to 250 ns when Sb/sub 65/Se/sub 35/ was introduced in place of the conventionally employed Ge 2 Sb 2 Te 5 (GST). The reset current of Sb/sub 65/Se/sub 35/ device also dramatically reduced from 15 mA to 1.6 mA, compared with that of GST device. These results are attributed to the low melting temperature and high crystallization speed of Sb/sub 65/Se/sub 35/ and will contribute to lower power and higher speed operations of a phase-change nonvolatile memory.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.874130