Origins of optical absorption between 4.8 and 4.9 eV in silica implanted with Si and with O ions

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Bibliographic Details
Published in:Journal of non-crystalline solids 2006-08, Vol.352 (28-29), p.3027-3034
Main Authors: MAGRUDER, R. H, STESMANS, A, CLEMER, K, WEEKS, R. A, WELLER, R. A
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in other materials
Electron paramagnetic resonance and relaxation
Exact sciences and technology
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Structure of solids and liquids
crystallography
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Summary:
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2006.03.069