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Activation energy for Ga diffusion on the GaAs(0 0 1)-(2 x 4) surface : an MBE-STM study
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| Main Authors: | , , , , , |
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| Format: | Conference Proceeding |
| Language: | English |
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| container_end_page | 92 |
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| container_start_page | 88 |
| container_title | |
| container_volume | 201202 |
| creator | YANG, H LABELLA, V. P BULLOCK, D. W DING, Z SMATHERS, J. B THIBADO, P. M |
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| format | conference_proceeding |
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| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 1999, Vol.201202, p.88-92 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_1799281 |
| source | ScienceDirect Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Diffusion interface formation Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Activation energy for Ga diffusion on the GaAs(0 0 1)-(2 x 4) surface : an MBE-STM study |
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