SONOS-type flash memory using an HfO2 as a charge trapping layer deposited by the sol-gel spin-coating method

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Bibliographic Details
Published in:IEEE electron device letters 2006-08, Vol.27 (8), p.653-655
Main Authors: YOU, Hsin-Chiang, HSU, Tze-Hsiang, KO, Fu-Hsiang, HUANG, Jiang-Wen, YANG, Wen-Luh, LEI, Tan-Fu
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.879026