Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments

Microstructural characterization by transmission electron microscopy of the {111} planar defects induced in Si by treatment in hydrogen plasma is discussed. The {111} defects are analyzed by conventional (TEM) and high-resolution transmission electron microscopy (HRTEM). Quantitative image processin...

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Bibliographic Details
Published in:Philosophical magazine (Abingdon, England) England), 2006-11, Vol.86 (32), p.5137-5151
Main Authors: Ghica, C., Nistor, L. C., Bender, H., Richard, O., Van Tendeloo, G., Ulyashin, A.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Physics
Stacking faults and other planar or extended defects
Structure of solids and liquids
crystallography
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Summary:Microstructural characterization by transmission electron microscopy of the {111} planar defects induced in Si by treatment in hydrogen plasma is discussed. The {111} defects are analyzed by conventional (TEM) and high-resolution transmission electron microscopy (HRTEM). Quantitative image processing by the geometrical phase method is applied to the experimental high-resolution image of an edge-on oriented {111} defect to measure the local displacements and strain field around it. Using these data, a structural model of the defect is derived. The validity of the structural model is checked by high-resolution image simulation and comparison with experimental images.
ISSN:1478-6435
1478-6443
1478-6433
DOI:10.1080/14786430600801443