A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs

The valence-band electron (EVB) tunneling current in partially depleted silicon-on-insulator (SOI) MOSFETs increases as the gate oxide gets thinner and affects the dynamic behavior of devices and circuits. We present an engineering model of EVB tunneling current based on the surface-potential formul...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-02, Vol.54 (2), p.316-322
Main Authors: Wu, W., Xin Li, Gildenblat, G., Workman, G.O., Veeraraghavan, S., McAndrew, C.C., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Circuits
Delay
Depletion
Devices
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Gates (circuits)
Hysteresis
MOSFETs
Oxides
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon-on-insulator (SOI)
surface potential
Switching, multiplexing, switched capacity circuits
symmetric linearization
Transistors
Tunneling
valence-band electron (EVB) tunneling
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Summary:The valence-band electron (EVB) tunneling current in partially depleted silicon-on-insulator (SOI) MOSFETs increases as the gate oxide gets thinner and affects the dynamic behavior of devices and circuits. We present an engineering model of EVB tunneling current based on the surface-potential formulation. The new model is implemented in a SOI MOSFET compact model and is used to study the impact of EVB tunneling on circuit performance. Simulations of stacked logic gates show that the EVB tunneling current not only boosts circuit switching speed but also mitigates the history dependence of propagation delays
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.888750