Analytic Charge Model for Surrounding-Gate MOSFETs

This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation reg...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-03, Vol.54 (3), p.492-496
Main Authors: Yu, Bo, Lu, Wei-Yuan, Lu, Huaxin, Taur, Yuan
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Approximation
Asymmetry
Capacitance
Charge
Compact model
Electronics
Exact sciences and technology
Exact solutions
Integrated circuit modeling
Mathematical analysis
Mathematical model
Mathematical models
MOSFET
MOSFETs
Numerical models
Poisson equation
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
surrounding gate (SG)
Transistors
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Summary:This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters and hence predictive. In addition, it is inherently not source-referenced to avoid asymmetries. It is shown that the current-voltage characteristics generated by this model agree with the numerical simulation results
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.890264