Graded tunnelling barrier and oxygen concentration in thermally grown ultrathin SiOx gate oxide

Barrier parameters of a thermally grown SiOx gate oxide are derived by relating the SIMS oxygen concentration profile to the barrier height. Even in the simple analytical form such a graded barrier model agrees with the tunnelling current and its voltage dependence in both directions. Asymmetrical t...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2007-04, Vol.40 (7), p.2143-2149
Main Authors: Gitlin, Daniel, Karp, James, Moyzhes, Boris
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
Tunneling
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Summary:Barrier parameters of a thermally grown SiOx gate oxide are derived by relating the SIMS oxygen concentration profile to the barrier height. Even in the simple analytical form such a graded barrier model agrees with the tunnelling current and its voltage dependence in both directions. Asymmetrical tunnelling I-Vs in the symmetrical n+Si-SiOx-n+Si structure are due to both graded barrier and penetration of carriers into the gate oxide at the SiOx-Si substrate interface.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/40/7/043