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High performance III/V RTD and PIN diode on a silicon (001) substrate: From surface science to nanoscale devices
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Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2007, Vol.87 (3), p.539-544 |
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container_end_page | 544 |
container_issue | 3 |
container_start_page | 539 |
container_title | Applied physics. A, Materials science & processing |
container_volume | 87 |
creator | PROST, W KHORENKO, V MOFOR, A.-C NEUMANN, S POLOCZEK, A MATISS, A BAKIN, A SCHLACHETZKI, A TEGUDE, F.-J |
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ispartof | Applied physics. A, Materials science & processing, 2007, Vol.87 (3), p.539-544 |
issn | 0947-8396 1432-0630 |
language | eng |
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source | Springer Nature |
subjects | Applied sciences Circuit properties Compound structure devices Diodes Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated optics. Optical fibers and wave guides Optical and optoelectronic circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | High performance III/V RTD and PIN diode on a silicon (001) substrate: From surface science to nanoscale devices |
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