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High performance III/V RTD and PIN diode on a silicon (001) substrate: From surface science to nanoscale devices

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Published in:Applied physics. A, Materials science & processing Materials science & processing, 2007, Vol.87 (3), p.539-544
Main Authors: PROST, W, KHORENKO, V, MOFOR, A.-C, NEUMANN, S, POLOCZEK, A, MATISS, A, BAKIN, A, SCHLACHETZKI, A, TEGUDE, F.-J
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container_title Applied physics. A, Materials science & processing
container_volume 87
creator PROST, W
KHORENKO, V
MOFOR, A.-C
NEUMANN, S
POLOCZEK, A
MATISS, A
BAKIN, A
SCHLACHETZKI, A
TEGUDE, F.-J
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source Springer Nature
subjects Applied sciences
Circuit properties
Compound structure devices
Diodes
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated optics. Optical fibers and wave guides
Optical and optoelectronic circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title High performance III/V RTD and PIN diode on a silicon (001) substrate: From surface science to nanoscale devices
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