Quantized field-electron emission at 300 K in self-assembled arrays of silicon nanowires

Dense ensembles of silicon nanowires were prepared by metal-catalyzed chemical vapor deposition on silicon substrates. Some of these ensembles were doped with phosphorous during growth. The nanowires were characterized using scanning electron microscopy, X-ray diffraction, and mass spectroscopy. Fie...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2007-03, Vol.37 (1), p.212-217
Main Authors: Klimovskaya, A.I., Raichev, O.E., Dadykin, A.A., Litvin, Yu.M., Lytvyn, P.M., Prokopenko, I.V., Kamins, T.I., Sharma, S., Moklyak, Yu
Format: Article
Language:English
Subjects:
Array of silicon nanowires
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Field emission
Field emission, ionization, evaporation, and desorption
Physics
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Summary:Dense ensembles of silicon nanowires were prepared by metal-catalyzed chemical vapor deposition on silicon substrates. Some of these ensembles were doped with phosphorous during growth. The nanowires were characterized using scanning electron microscopy, X-ray diffraction, and mass spectroscopy. Field emission of electrons from these structures was studied at room temperatures in ultra-high vacuum. The measurements were carried out using a parallel-plate diode cell. At high-applied fields, the current–voltage characteristics deviate from the Fowler–Nordheim law and exhibit a step-wise increase in the current with the increasing voltage at 300 K. Possible mechanisms of the observed quantized field emission are discussed.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2006.09.007